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| NTGD4161P Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 Features * * * * * Fast Switching Speed Low Gate Charge Low RDS(on) Independently Connected Devices to Provide Design Flexibility This is a Pb-Free Device http://onsemi.com V(BR)DSS -30 V RDS(on) Max 160 mW @ -10 V 280 mW @ -4.5 V Applications * Load Switch * Battery Protection * Portable Devices Like PDAs, Cellular Phones and Hard Drives MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value -30 20 -2.1 -1.5 -2.3 1.1 1.3 -1.5 -1.1 0.6 -10 -55 to 150 -0.8 260 W A C A C A W Unit V V A P-Channel (MOSFET1) D1 P-Channel (MOSFET2) D2 G1 G2 S1 S2 MARKING DIAGRAM D1 S1 D2 1 TSOP-6 CASE 318G STYLE 13 S8 M G S8 MG G G1 S2 G2 = Specific Device Code = Date Code* = Pb-Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient - t 5 s (Note 1) Junction-to-Case - Steady State (Note 1) RqJC Symbol RqJA Max 115 225 95 40 Unit C/W *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGD4161PT1G Package TSOP-6 (Pb-Free) Shipping 3000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.2 in2 [1 oz] including traces) 2. When surface mounted to an FR4 board using minimum recommended pad size (Cu. area = 0.047 in2) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 September, 2006 - Rev. 1 Publication Order Number: NTGD4161P/D NTGD4161P ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = -24 V TJ = 25C TJ = 125C VGS = 0 V, ID = -250 mA -30 22 -1.0 -10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = -250 mA -1.0 -1.9 -4.7 -3.0 V mV/C VGS = -10 V, ID = -2.1 A VGS = -4.5 V, ID = -1.6 A 105 190 2.7 160 280 m Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gFS VDS = -5.0 V, ID = -2.1 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -10 V, VDS = -5.0 V, ID = -2.1A VDS = -15 V, f = 1.0 MHz, VGS = 0 V 281 50 28 5.6 0.65 1.2 0.90 7.1 pF nC td(on) tr td(off) tf VGS = -4.5 V, VDD = -15 V, ID = -1.0 A, RG = 6.0 7.6 9.2 12.5 4.5 14 23 20 12 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -0.8 A TJ = 25C TJ = 125C -0.79 -0.65 8.0 VGS = 0 V, dIS/dt = 100 A/ms, IS = -0.8 A 5.7 2.3 3 nC ns -1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: pulse width 300 ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTGD4161P TYPICAL PERFORMANCE CURVES 5 -ID, DRAIN CURRENT (A) 5 -10 V -4.5 V TJ = 25C -ID, DRAIN CURRENT (A) VDS -3 V 4 -4 V 4 3 -3.8 V -3.6 V -3.4 V 3 2 2 150C 25C -40C 0 1 -3.2 V -3 V -2.8 V 0 1 2 3 4 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5 1 0 1 2 3 4 -VGS, GATE-TO-SOURCE VOLTAGE (V) 5 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.5 ID = -2.1 A 0.4 0.4 0.35 0.3 VGS = -4.5 V 0.25 0.2 0.15 0.1 VGS = -10 V 0.05 0 0 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) TJ = 25C 0.3 TJ = 125C 0.2 TJ = 25C 0.1 0 3 4 5 6 7 8 9 10 -VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE 0.3 1000 VGS = 0 V ID = -1.6 A VGS = -4.5 V -IDSS, LEAKAGE(nA) TJ = 150C 0.2 100 TJ = 125C 0.1 ID = -2.1 A VGS = -10 V 0.0 -50 10 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. On-Resistance Variation with Temperature http://onsemi.com 3 NTGD4161P TYPICAL PERFORMANCE CURVES 350 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 0 CRSS 5 10 15 20 25 30 COSS TJ = 25C VGS = 0 V CISS -VGS, GATE-TO-SOURCE VOLTAGE (V) 10 QT 8 VGS 6 QGS QGD 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 8 6 4 4 2 VDS 0 0 1 2 3 4 5 QG, TOTAL GATE CHARGE (nC) ID = -2.1 A TJ = 25C 2 0 6 DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 0.8 -IS, SOURCE CURRENT (A) -ID, DRAIN CURRENT (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.3 0.4 0.5 0.6 TJ = 25C TJ = -40C 0.7 0.8 0.9 1.0 TJ = 150C VGS = 0 V 10 VGS = -10 V Single Pulse TA = 25C 100 ms 1 ms 1 10 ms 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 10 100 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) dc TJ = 125C -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 1.0 RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 1E-06 Single Pulse 1E-05 1E-04 1E-03 1E-02 t, time (s) 1E-01 1E+00 1E+01 1E+02 1E+03 Figure 11. FET Thermal Response http://onsemi.com 4 NTGD4161P PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 SOLDERING FOOTPRINT* 2.4 0.094 STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTGD4161P/D |
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